Irf840 Schaltplan. Irf840 sihf840 absolute maximum ratings tc 25 c unless otherwise noted parameter symbol limit unit drain source voltage vds 500 v gate source voltage vgs 20 v continuous drain current vgs at 10 v tc 25 c id 8 0 tc 100 c 5 1 a pulsed drain current a idm 32 linear derating factor 1 0 w c single pulse avalanche energy b eas 510 mj. The irf840 is an n channel power mosfet which can switch loads upto 500v.
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2002 fairchild semiconductor corporation irf840 rev. B irf840 8a 500v 0 850 ohm n channel power mosfet this n channel enhancement mode silicon gate power field effect transistor is an advanced power mosfet designed tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. Irf840 sihf840 absolute maximum ratings tc 25 c unless otherwise noted parameter symbol limit unit drain source voltage vds 500 v gate source voltage vgs 20 v continuous drain current vgs at 10 v tc 25 c id 8 0 tc 100 c 5 1 a pulsed drain current a idm 32 linear derating factor 1 0 w c single pulse avalanche energy b eas 510 mj.
Irf840 sihf840 absolute maximum ratings tc 25 c unless otherwise noted parameter symbol limit unit drain source voltage vds 500 v gate source voltage vgs 20 v continuous drain current vgs at 10 v tc 25 c id 8 0 tc 100 c 5 1 a pulsed drain current a idm 32 linear derating factor 1 0 w c single pulse avalanche energy b eas 510 mj. Irf840 features drain current id 8 0a tc 25 c drain source voltage. Irf840 sihf840 absolute maximum ratings tc 25 c unless otherwise noted parameter symbol limit unit drain source voltage vds 500 v gate source voltage vgs 20 v continuous drain current vgs at 10 v tc 25 c id 8 0 tc 100 c 5 1 a pulsed drain current a idm 32 linear derating factor 1 0 w c single pulse avalanche energy b eas 510 mj. The mosfet could switch loads that consume upto 8a it can turned on by providing a gate threshold voltage of 10v across the gate and source pin.
